Tampere University of Technology

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Applied Physics Letters (Journal)

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  1. GaSb diode lasers tunable around 2.6 μ m using silicon photonics resonators or external diffractive gratings

    Research output: Contribution to journalArticleScientificpeer-review

  2. High-power single mode GaSb-based 2 μm superluminescent diode with double-pass gain

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  3. InAs/InP quantum dot VECSEL emitting at 1.5 μ m

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  4. High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

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  5. Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets

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