Applied Physics Letters (Journal)
Activity: Publication peer-review and editorial work › Reviewer of Scientific Journal
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High-power single mode GaSb-based 2 μm superluminescent diode with double-pass gain
Research output: Contribution to journal › Article › Scientific › peer-review
InAs/InP quantum dot VECSEL emitting at 1.5 μ m
Research output: Contribution to journal › Article › Scientific › peer-review
High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range
Research output: Contribution to journal › Article › Scientific › peer-review
Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets
Research output: Contribution to journal › Article › Scientific › peer-review
Thermophotonic cooling in GaAs based light emitters
Research output: Contribution to journal › Article › Scientific › peer-review
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Back Reflector with Diffractive Gratings for Light-Trapping in Thin-Film III-V Solar Cells
Activity: Talk or presentation › Conference presentation
Narrow Bandgap Dilute Nitride Materials for 6- junction Space Solar Cells
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Advances in III-V MBE technology: bridging material science to application
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High Efficiency Lattice-Matched 4J Space Solar Cells on GaAs
Activity: Talk or presentation › Conference presentation
High Efficiency Lattice Matched Four-Junction Solar Cells on GaAs
Activity: Talk or presentation › Conference presentation
Performance Study of Lattice-Matched Multijunction Solar Cells Incorporating GaInNAsSb Junctions with 0.7 – 1.4 eV Bandgap
Activity: Talk or presentation › Conference presentation
Performance Study of Lattice-Matched Multijunction Solar Cells Incorporating GaInNAsSb Junctions with 0.7 – 1.4 eV Bandgap
Activity: Talk or presentation › Conference presentation
Progress in III-V/Si photonic integration technology
Activity: Talk or presentation › Conference presentation
750 nm direct emitting VECSELs towards isotope separation applications for nuclear medicine
Activity: Talk or presentation › Conference presentation
High N-concentration GaInNAsSb materials for III–V solar cells with bandgaps below 0.8 eV
Activity: Talk or presentation › Conference presentation
ID: 890706