Tampere University of Technology

TUTCRIS Research Portal

Mircea Guina

  1. 2019
  2. Published

    High Power 1.5um Pulsed Laser Diode with Asymmetric Waveguide and Active Layer Near p-cladding

    Hallman, L. W., Ryvkin, B. S., Avrutin, E. A., Aho, A. T., Viheriälä, J., Guina, M. & Kostamovaara, J. T., 15 Oct 2019, In : IEEE Photonics Technology Letters. 31, 20, p. 1635-1638

    Research output: Contribution to journalArticleScientificpeer-review

  3. Published

    Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporation

    Reuna, J., Polojärvi, V., Pääkkönen, P., Lahtonen, K., Raappana, M., Aho, T., Isoaho, R., Aho, A., Valden, M. & Guina, M., Oct 2019, In : Optical Materials. 96, 9 p., 109326.

    Research output: Contribution to journalArticleScientificpeer-review

  4. Published

    Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

    Luna, E., Wu, M., Aoki, T., McCartney, M. R., Puustinen, J., Hilska, J., Guina, M., Smith, D. J. & Trampert, A., 28 Aug 2019, In : Journal of Applied Physics. 126, 8, 085305.

    Research output: Contribution to journalArticleScientificpeer-review

  5. Published

    High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

    Aho, A., Viheriälä, J., Virtanen, H., Zia, N., Isoaho, R. & Guina, M., 22 Aug 2019, In : Applied Physics Letters. 115, 8, 4 p., 081104 .

    Research output: Contribution to journalArticleScientificpeer-review

  6. Published

    Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowires

    Hakkarainen, T., Rizzo Piton, M., Fiordaliso, E. M., Leshchenko, E. D., Koelling, S., Bettini, J., Vinicius Avanço Galeti, H., Koivusalo, E., Gobato, Y. G., De Giovanni Rodrigues, A., Lupo, D., Koenraad, P. M., Leite, E. R., Dubrovskii, V. G. & Guina, M., 5 Aug 2019, In : Physical Review Materials. 3, 8, 086001.

    Research output: Contribution to journalArticleScientificpeer-review

  7. Published

    AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

    Nechay, K., Kahle, H., Penttinen, J-P., Rajala, P., Tukiainen, A., Ranta, S. & Guina, M., 1 Aug 2019, In : IEEE Photonics Technology Letters. 31, 15, p. 1245-1248 4 p.

    Research output: Contribution to journalArticleScientificpeer-review

  8. Published

    Epitaxial phases of high Bi content GaSbBi alloys

    Hilska, J., Koivusalo, E., Puustinen, J., Suomalainen, S. & Guina, M., 15 Jun 2019, In : Journal of Crystal Growth. 516, p. 67-71 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

  9. Published

    Photovoltaic properties of low-bandgap (0.7–0.9 eV) lattice-matched GaInNAsSb solar junctions grown by molecular beam epitaxy on GaAs

    Isoaho, R., Aho, A., Tukiainen, A., Aho, T., Raappana, M., Salminen, T., Reuna, J. & Guina, M., 15 Jun 2019, In : Solar Energy Materials and Solar Cells. 195, p. 198-203 6 p.

    Research output: Contribution to journalArticleScientificpeer-review

  10. Published

    Double-side pumped membrane external-cavity surface-emitting laser (MECSEL) with increased efficiency emitting > 3 W in the 780 nm region

    Kahle, H., Phung, H-M., Penttinen, J-P., Rajala, P., Tukiainen, A., Ranta, S. & Guina, M., 1 May 2019, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. IEEE

    Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

  11. Published

    GaInAsSb/AlGa(In)AsSb type I quantum wells emitting in 3 μm range for application in superluminescent diodes

    Kurka, M., Dyksik, M., Suomalainen, S., Koivusalo, E., Guina, M. & Motyka, M., 1 May 2019, In : Optical Materials. 91, p. 274-278 5 p.

    Research output: Contribution to journalArticleScientificpeer-review

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