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0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric

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0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric. / Bhalerao, Sagar R.; Lupo, Donald; Zangiabadi, Amirali; Kymissis, Ioannis; Leppäniemi, Jaakko; Alastalo, Ari; Berger, Paul R.

In: IEEE Electron Device Letters, Vol. 40, No. 7, 01.07.2019, p. 1112-1115.

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Bhalerao, Sagar R. ; Lupo, Donald ; Zangiabadi, Amirali ; Kymissis, Ioannis ; Leppäniemi, Jaakko ; Alastalo, Ari ; Berger, Paul R. / 0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric. In: IEEE Electron Device Letters. 2019 ; Vol. 40, No. 7. pp. 1112-1115.

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@article{776a0ac7cada4faa82f1ff32e8029343,
title = "0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric",
abstract = "Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.",
keywords = "anodization, indium oxide (InO), interface state density, low voltage, Metal oxide semiconductors, solution processing, TFT",
author = "Bhalerao, {Sagar R.} and Donald Lupo and Amirali Zangiabadi and Ioannis Kymissis and Jaakko Lepp{\"a}niemi and Ari Alastalo and Berger, {Paul R.}",
year = "2019",
month = "7",
day = "1",
doi = "10.1109/LED.2019.2918492",
language = "English",
volume = "40",
pages = "1112--1115",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers",
number = "7",

}

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TY - JOUR

T1 - 0.6V threshold voltage thin film transistors with solution processable indium oxide (In2O3) Channel and Anodized High-κ Al2O3 Dielectric

AU - Bhalerao, Sagar R.

AU - Lupo, Donald

AU - Zangiabadi, Amirali

AU - Kymissis, Ioannis

AU - Leppäniemi, Jaakko

AU - Alastalo, Ari

AU - Berger, Paul R.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.

AB - Low-voltage operation and low processing temperature of metal oxide transistors remain a challenge. Commonly metal oxide transistors are fabricated at very high processing temperatures (above 500°C) and their operating voltage is quite high (30-50 V). Here, thin-film transistors (TFT) are reported based upon solution processable indium oxide (In2O3) and room temperature processed anodized high- κ aluminum oxide (Al2O3) for gate dielectrics. The In2O3 TFTs operate well below the drain bias (Vds) of 3.0 V, with on/off ratio 105, subthreshold swing (SS) 160 mV/dec, hysteresis 0.19 V, and low threshold voltage (Vth)~0.6 V. The electron mobility (μ) is as high as 3.53 cm2/V.s in the saturation regime and normalized transconductance (gm) is 75μS/mm. In addition, the detailed capacitance-voltage (C-V) analysis to determine interface trap states density was also investigated. The interface trap density (Dit) in the oxide/semiconductor interface was quite low, i.e., 0.99 × 1011 - 2.98 × 1011 eV-1· cm2, signifying acceptable compatibility of In2O3 with anodic Al2O3.

KW - anodization

KW - indium oxide (InO)

KW - interface state density

KW - low voltage

KW - Metal oxide semiconductors

KW - solution processing

KW - TFT

U2 - 10.1109/LED.2019.2918492

DO - 10.1109/LED.2019.2918492

M3 - Article

VL - 40

SP - 1112

EP - 1115

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

ER -