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0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Number of pages5
JournalIEEE Transactions on Electron Devices
DOIs
Publication statusPublished - 2019
Publication typeA1 Journal article-refereed

Abstract

Solution-based deposition, with its simplicity and possibility for upscaling through printing, is a promising process for low-cost electronics. Metal oxide semiconductor devices, especially indium oxide with its excellent electrical properties, offer high performance compared to amorphous Si-based rivals, and with a form factor conducive to flexible and wearable electronics. Here, rectifying diodes based on an amorphous spin-coated indium oxide are fabricated for high-speed applications. We report a solution-processed diode approaching the UHF range, based on indium oxide, with aluminum and gold as the electrodes. The device was spin-coated from a precursor material and configured into a half-wave rectifier. The J-V and frequency behavior of the diodes were studied, and the material composition of the diode was investigated by X-ray photoemission spectroscopy (XPS). The 3-dB point was found to be over 700 MHz. The results are promising for the development of autonomously powered wireless Internet-of-Things systems based on scalable, low-cost processes.

Keywords

  • High-frequency rectifying diodes, metal oxide semiconductors, solution-processed indium oxide.

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