0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||5|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2019|
|Publication type||A1 Journal article-refereed|
Solution-based deposition, with its simplicity and possibility for upscaling through printing, is a promising process for low-cost electronics. Metal oxide semiconductor devices, especially indium oxide with its excellent electrical properties, offer high performance compared to amorphous Si-based rivals, and with a form factor conducive to flexible and wearable electronics. Here, rectifying diodes based on an amorphous spin-coated indium oxide are fabricated for high-speed applications. We report a solution-processed diode approaching the UHF range, based on indium oxide, with aluminum and gold as the electrodes. The device was spin-coated from a precursor material and configured into a half-wave rectifier. The J-V and frequency behavior of the diodes were studied, and the material composition of the diode was investigated by X-ray photoemission spectroscopy (XPS). The 3-dB point was found to be over 700 MHz. The results are promising for the development of autonomously powered wireless Internet-of-Things systems based on scalable, low-cost processes.
- High-frequency rectifying diodes, metal oxide semiconductors, solution-processed indium oxide.