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1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells

Research output: Contribution to journalArticleScientificpeer-review

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1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells. / Xiang, N.; Leinonen, P.; Rajala, L.; Lyytikäinen, J.; Pessa, M.

In: Journal of Materials Science: Materials in Electronics, Vol. 15, 2004, p. 115-117.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Xiang, N, Leinonen, P, Rajala, L, Lyytikäinen, J & Pessa, M 2004, '1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells', Journal of Materials Science: Materials in Electronics, vol. 15, pp. 115-117.

APA

Xiang, N., Leinonen, P., Rajala, L., Lyytikäinen, J., & Pessa, M. (2004). 1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells. Journal of Materials Science: Materials in Electronics, 15, 115-117.

Vancouver

Xiang N, Leinonen P, Rajala L, Lyytikäinen J, Pessa M. 1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells. Journal of Materials Science: Materials in Electronics. 2004;15:115-117.

Author

Xiang, N. ; Leinonen, P. ; Rajala, L. ; Lyytikäinen, J. ; Pessa, M. / 1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells. In: Journal of Materials Science: Materials in Electronics. 2004 ; Vol. 15. pp. 115-117.

Bibtex - Download

@article{6761e0e424da4b08b161db555875cbd7,
title = "1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells",
author = "N. Xiang and P. Leinonen and L. Rajala and J. Lyytik{\"a}inen and M. Pessa",
note = "Contribution: organisation=orc,FACT1=1",
year = "2004",
language = "English",
volume = "15",
pages = "115--117",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer Verlag",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - 1.02-um vertical-cavity surface-emitting lasers with strain-compensated InGaAs quantum wells

AU - Xiang, N.

AU - Leinonen, P.

AU - Rajala, L.

AU - Lyytikäinen, J.

AU - Pessa, M.

N1 - Contribution: organisation=orc,FACT1=1

PY - 2004

Y1 - 2004

M3 - Article

VL - 15

SP - 115

EP - 117

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

ER -