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1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime

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1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime. / Strittmatter, A.; Germann, T.D.; Pohl, J.; Pohl, U.W.; Bimberg, D.; Rautiainen, J.; Guina, M.; Okhotnikov, O.G.

In: Electronics Letters, Vol. 44, No. 4, 2008, p. 290-291.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Strittmatter, A, Germann, TD, Pohl, J, Pohl, UW, Bimberg, D, Rautiainen, J, Guina, M & Okhotnikov, OG 2008, '1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime', Electronics Letters, vol. 44, no. 4, pp. 290-291. https://doi.org/10.1049/el:20083131

APA

Strittmatter, A., Germann, T. D., Pohl, J., Pohl, U. W., Bimberg, D., Rautiainen, J., ... Okhotnikov, O. G. (2008). 1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime. Electronics Letters, 44(4), 290-291. https://doi.org/10.1049/el:20083131

Vancouver

Strittmatter A, Germann TD, Pohl J, Pohl UW, Bimberg D, Rautiainen J et al. 1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime. Electronics Letters. 2008;44(4):290-291. https://doi.org/10.1049/el:20083131

Author

Strittmatter, A. ; Germann, T.D. ; Pohl, J. ; Pohl, U.W. ; Bimberg, D. ; Rautiainen, J. ; Guina, M. ; Okhotnikov, O.G. / 1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime. In: Electronics Letters. 2008 ; Vol. 44, No. 4. pp. 290-291.

Bibtex - Download

@article{fc31b6d9791246e6bbcbd6de1d714209,
title = "1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime",
author = "A. Strittmatter and T.D. Germann and J. Pohl and U.W. Pohl and D. Bimberg and J. Rautiainen and M. Guina and O.G. Okhotnikov",
note = "EU project NATAL<br/>Contribution: organisation=orc,FACT1=1",
year = "2008",
doi = "10.1049/el:20083131",
language = "English",
volume = "44",
pages = "290--291",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "4",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - 1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in the Stranski-Krastanow regime

AU - Strittmatter, A.

AU - Germann, T.D.

AU - Pohl, J.

AU - Pohl, U.W.

AU - Bimberg, D.

AU - Rautiainen, J.

AU - Guina, M.

AU - Okhotnikov, O.G.

N1 - EU project NATAL<br/>Contribution: organisation=orc,FACT1=1

PY - 2008

Y1 - 2008

U2 - 10.1049/el:20083131

DO - 10.1049/el:20083131

M3 - Article

VL - 44

SP - 290

EP - 291

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 4

ER -