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1180 nm GaInNAs quantum well based high power DBR laser diodes

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
Publication statusPublished - 2017
EventSPIE Photonics West 2017 - The Moscone Center, San Francisco, United States
Duration: 28 Jan 20172 Feb 2017

Conference

ConferenceSPIE Photonics West 2017
CountryUnited States
CitySan Francisco
Period28/01/172/02/17

Abstract

Abstract: state-of-the-art 560 mW output power in continuous-wave operation at room temperature. The maximum CW power varies between 210mW and 660mW when the ambient temperature is changed between 5 and 80 °C. The emission spectrum variation with the bias current is shown in Fig. 2. Preliminary results from tapered RWG-LDs on the other hand show output power up to 2750mW at 10A current with narrow spectrum locked to the grating (not shown).

Keywords

  • GaInNAs, DBR laser, DBR, SHG, 1180nm, 1178nm, 1154nm

Field of science, Statistics Finland