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1180 nm GaInNAs quantum well based high power DBR laser diodes

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationHigh-Power Diode Laser Technology XV
EditorsMark S. Zediker
PublisherSPIE
Number of pages6
DOIs
Publication statusPublished - 24 Feb 2017
Publication typeA4 Article in a conference publication
EventSPIE Photonics West -
Duration: 1 Jan 1900 → …

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10086
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE Photonics West
Period1/01/00 → …

Abstract

We report state-of-the-art results for 1180nm (narrow linewidth) laser diodes based on GaInNAs quantum wells and show results for ridge waveguide DBR laser diode including its reliability tests. Manuscript demonstrates 500 mW output power in continuous-wave operation at room temperature, wide single mode tuning region and narrow linewidth operation. Devices reached narrow linewidth operation (>250 kHz) across their operation band.

ASJC Scopus subject areas

Keywords

  • DBR laser, dbr, 1180nm, 1178nm, 1154nm, SHG

Publication forum classification

Field of science, Statistics Finland