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1180nm VECSEL with 50 W output power

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9349
ISBN (Print)9781628414394
DOIs
Publication statusPublished - 2015
Publication typeA4 Article in a conference publication
EventVertical External Cavity Surface Emitting Lasers - , United Kingdom
Duration: 1 Jan 2015 → …

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
CountryUnited Kingdom
Period1/01/15 → …

Abstract

We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

Keywords

  • continuous wave, frequency doubling, heat management, high power, infrared, power scaling, SDL, VECSEL

Publication forum classification

Field of science, Statistics Finland