1180nm VECSEL with 50 W output power
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1180nm VECSEL with 50 W output power. / Kantola, Emmi; Leinonen, Tomi; Ranta, Sanna; Tavast, Miki; Penttinen, Jussi-Pekka; Guina, Mircea.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9349 SPIE, 2015. 93490U.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
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TY - GEN
T1 - 1180nm VECSEL with 50 W output power
AU - Kantola, Emmi
AU - Leinonen, Tomi
AU - Ranta, Sanna
AU - Tavast, Miki
AU - Penttinen, Jussi-Pekka
AU - Guina, Mircea
PY - 2015
Y1 - 2015
N2 - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.
AB - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.
KW - continuous wave
KW - frequency doubling
KW - heat management
KW - high power
KW - infrared
KW - power scaling
KW - SDL
KW - VECSEL
U2 - 10.1117/12.2079480
DO - 10.1117/12.2079480
M3 - Conference contribution
SN - 9781628414394
VL - 9349
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - SPIE
ER -