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1180nm VECSEL with 50 W output power

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1180nm VECSEL with 50 W output power. / Kantola, Emmi; Leinonen, Tomi; Ranta, Sanna; Tavast, Miki; Penttinen, Jussi-Pekka; Guina, Mircea.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9349 SPIE, 2015. 93490U.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Kantola, E, Leinonen, T, Ranta, S, Tavast, M, Penttinen, J-P & Guina, M 2015, 1180nm VECSEL with 50 W output power. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9349, 93490U, SPIE, Vertical External Cavity Surface Emitting Lasers, United Kingdom, 1/01/15. https://doi.org/10.1117/12.2079480

APA

Kantola, E., Leinonen, T., Ranta, S., Tavast, M., Penttinen, J-P., & Guina, M. (2015). 1180nm VECSEL with 50 W output power. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9349). [93490U] SPIE. https://doi.org/10.1117/12.2079480

Vancouver

Kantola E, Leinonen T, Ranta S, Tavast M, Penttinen J-P, Guina M. 1180nm VECSEL with 50 W output power. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9349. SPIE. 2015. 93490U https://doi.org/10.1117/12.2079480

Author

Kantola, Emmi ; Leinonen, Tomi ; Ranta, Sanna ; Tavast, Miki ; Penttinen, Jussi-Pekka ; Guina, Mircea. / 1180nm VECSEL with 50 W output power. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9349 SPIE, 2015.

Bibtex - Download

@inproceedings{0cda25369518488da76a346c2e945b2f,
title = "1180nm VECSEL with 50 W output power",
abstract = "We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97{\%} reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28{\%} was achieved for 42 W of output power and -15°C mount temperature.",
keywords = "continuous wave, frequency doubling, heat management, high power, infrared, power scaling, SDL, VECSEL",
author = "Emmi Kantola and Tomi Leinonen and Sanna Ranta and Miki Tavast and Jussi-Pekka Penttinen and Mircea Guina",
year = "2015",
doi = "10.1117/12.2079480",
language = "English",
isbn = "9781628414394",
volume = "9349",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
address = "United States",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - 1180nm VECSEL with 50 W output power

AU - Kantola, Emmi

AU - Leinonen, Tomi

AU - Ranta, Sanna

AU - Tavast, Miki

AU - Penttinen, Jussi-Pekka

AU - Guina, Mircea

PY - 2015

Y1 - 2015

N2 - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

AB - We report on the development of a high-power vertical-external-cavity surface-emitting laser (VECSEL) emitting around 1180 nm. The laser emitted 50 W of output power when the mount of the gain chip was cooled to -15°C. The output power was measured using a 97% reflective cavity end-mirror. The VECSEL was arranged to form an I-shaped cavity with a length of ∼100 mm; the gain chip and a curved dielectric mirror (RoC=150) acting as cavity end mirrors. The gain chip was grown by molecular beam epitaxy (MBE) and incorporated 10 GaInAs/GaAs quantum wells. For efficient heat extraction, the chip was capillary bonded to a diamond heat spreader which was attached to a TEC-cooled copper mount. The maximum optical-to-optical conversion efficiency of 28% was achieved for 42 W of output power and -15°C mount temperature.

KW - continuous wave

KW - frequency doubling

KW - heat management

KW - high power

KW - infrared

KW - power scaling

KW - SDL

KW - VECSEL

U2 - 10.1117/12.2079480

DO - 10.1117/12.2079480

M3 - Conference contribution

SN - 9781628414394

VL - 9349

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

ER -