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1.3 μm InAs quantum dot semiconductor disk laser

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
PagesR317
DOIs
Publication statusPublished - 23 Aug 2016
Event2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Russian Federation
Duration: 27 Jun 20161 Jul 2016

Conference

Conference2016 International Conference Laser Optics, LO 2016
CountryRussian Federation
CitySt. Petersburg
Period27/06/161/07/16

Abstract

Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality [1]. The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature [2]. However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated [3]. Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.

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