1.3 μm InAs quantum dot semiconductor disk laser
Research output: Other conference contribution › Paper, poster or abstract › Scientific
|Publication status||Published - 23 Aug 2016|
|Event||2016 International Conference Laser Optics, LO 2016 - St. Petersburg, Russian Federation|
Duration: 27 Jun 2016 → 1 Jul 2016
|Conference||2016 International Conference Laser Optics, LO 2016|
|Period||27/06/16 → 1/07/16|
Vertical-external-cavity surface-emitting lasers (VECSEL), or semiconductor disk lasers (SDL), are attractive laser source for a wide range of applications owing to unique possibility to combine high output power with an excellent beam quality . The intrinsic features of InAs quantum dots (QD) can offer low threshold, broad wavelength tunability, fast carrier dynamics and low temperature sensitivity. Recently, continuous wave (CW) operation of QD-based VECSEL emitting at 1.25 μm with output powers reaching multi-watt levels were achieved at room temperature . However, extending the emission wavelength to 1.3 μm and beyond becomes more challenging. To date, QD-based VECSEL with optical power greater than 0.5 mW at 1305 nm has been demonstrated . Here, we present a record-high power InAs/InGaAs QD-based VECSEL operating at the wavelength of 1.3 μm.