1.34 μm VECSEL mode-locked with a GaSb-based SESAM
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Details
| Original language | English |
|---|---|
| Pages (from-to) | 3353-3356 |
| Number of pages | 4 |
| Journal | Optics Letters |
| Volume | 43 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 15 Jul 2018 |
| Publication type | A1 Journal article-refereed |
Abstract
Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37 μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump–probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5 ps, and a peak power of ∼1.67 W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3–2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.