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1.34 μm VECSEL mode-locked with a GaSb-based SESAM

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1.34 μm VECSEL mode-locked with a GaSb-based SESAM. / Härkönen, Antti; Suomalainen, Soile; Rantamäki, Antti; Nikkinen, Jari; Wang, Yicheng; Griebner, Uwe; Steinmeyer, Günter; Guina, Mircea.

In: Optics Letters, Vol. 43, No. 14, 15.07.2018, p. 3353-3356.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Härkönen, A, Suomalainen, S, Rantamäki, A, Nikkinen, J, Wang, Y, Griebner, U, Steinmeyer, G & Guina, M 2018, '1.34 μm VECSEL mode-locked with a GaSb-based SESAM', Optics Letters, vol. 43, no. 14, pp. 3353-3356. https://doi.org/10.1364/OL.43.003353

APA

Härkönen, A., Suomalainen, S., Rantamäki, A., Nikkinen, J., Wang, Y., Griebner, U., ... Guina, M. (2018). 1.34 μm VECSEL mode-locked with a GaSb-based SESAM. Optics Letters, 43(14), 3353-3356. https://doi.org/10.1364/OL.43.003353

Vancouver

Härkönen A, Suomalainen S, Rantamäki A, Nikkinen J, Wang Y, Griebner U et al. 1.34 μm VECSEL mode-locked with a GaSb-based SESAM. Optics Letters. 2018 Jul 15;43(14):3353-3356. https://doi.org/10.1364/OL.43.003353

Author

Härkönen, Antti ; Suomalainen, Soile ; Rantamäki, Antti ; Nikkinen, Jari ; Wang, Yicheng ; Griebner, Uwe ; Steinmeyer, Günter ; Guina, Mircea. / 1.34 μm VECSEL mode-locked with a GaSb-based SESAM. In: Optics Letters. 2018 ; Vol. 43, No. 14. pp. 3353-3356.

Bibtex - Download

@article{9c1908e7d8c9479d9f8843f818b9dc4a,
title = "1.34 μm VECSEL mode-locked with a GaSb-based SESAM",
abstract = "Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37 μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump–probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5 ps, and a peak power of ∼1.67 W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3–2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.",
author = "Antti H{\"a}rk{\"o}nen and Soile Suomalainen and Antti Rantam{\"a}ki and Jari Nikkinen and Yicheng Wang and Uwe Griebner and G{\"u}nter Steinmeyer and Mircea Guina",
note = "EXT={"}Steinmeyer, G{\"u}nter{"}",
year = "2018",
month = "7",
day = "15",
doi = "10.1364/OL.43.003353",
language = "English",
volume = "43",
pages = "3353--3356",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "OPTICAL SOC AMER",
number = "14",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - 1.34 μm VECSEL mode-locked with a GaSb-based SESAM

AU - Härkönen, Antti

AU - Suomalainen, Soile

AU - Rantamäki, Antti

AU - Nikkinen, Jari

AU - Wang, Yicheng

AU - Griebner, Uwe

AU - Steinmeyer, Günter

AU - Guina, Mircea

N1 - EXT="Steinmeyer, Günter"

PY - 2018/7/15

Y1 - 2018/7/15

N2 - Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37 μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump–probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5 ps, and a peak power of ∼1.67 W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3–2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.

AB - Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.37 μm. The proposed approach has two key benefits: the QWs can be grown lattice matched, and only a small number of Bragg reflector layers is required to provide high reflectivity. Pump–probe measurements also reveal that the AlGaSb/GaSb structure exhibits an intrinsically fast absorption recovery on a picosecond timescale. The mode-locked laser pulse train had a fundamental repetition rate of 1.03 GHz, a pulse duration of ∼5 ps, and a peak power of ∼1.67 W. The demonstration paves the way for exploiting GaSb-based SESAMs for mode locking in the 1.3–2 μm wavelength range, which is not sufficiently addressed by GaAs and InP material systems.

U2 - 10.1364/OL.43.003353

DO - 10.1364/OL.43.003353

M3 - Article

VL - 43

SP - 3353

EP - 3356

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 14

ER -