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1.3μm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationSilicon Photonics XIV
EditorsGraham T. Reed, Andrew P. Knights
PublisherSPIE, IEEE
ISBN (Electronic)9781510624887
DOIs
Publication statusPublished - 2019
Publication typeA4 Article in a conference publication
EventSilicon Photonics - San Francisco, United States
Duration: 4 Feb 20196 Feb 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10923
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSilicon Photonics
CountryUnited States
CitySan Francisco
Period4/02/196/02/19

Abstract

We present a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes. The design greatly simplifies the butt-coupling between the III-V chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet. This removes the need for precise dimension control otherwise required for 2-side coupling, therefore increasing the yield of mounted devices towards 100%. The design, fabrication and characterization of the U-bend device based on Euler bend geometry is presented. The losses for a bend with a minimum bending radius of 83 μm are 1.1 dB. In addition, we present an analysis comparing the yield and coupling losses of the traditionally cleaved devices with the results that the Euler bend approach enable, with the final conclusion that the yield is improved by several times while the losses are decreased by several dB.

Keywords

  • Coupling losses, Hybrid integration, III-V, Semiconductor optical amplifiers, Silicon-on-insulator

Publication forum classification

Field of science, Statistics Finland