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1.55-μm wavelength wafer-fused OP-VECSELs in flip-chip configuration

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) IX
EditorsUrsula Keller
PublisherSPIE, IEEE
ISBN (Electronic)9781510624443
DOIs
Publication statusPublished - 2019
Publication typeA4 Article in a conference publication
EventVertical External Cavity Surface Emitting Lasers - San Francisco, United States
Duration: 5 Feb 20196 Feb 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10901
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
CountryUnited States
CitySan Francisco
Period5/02/196/02/19

Abstract

Optically-pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55-μm wavelength range are reported. The gain mirrors employ wafer-fused InAlGaAs/InP quantum well heterostructures and GaAs/AlAs distributed Bragg reflectors, which were incorporated in a linear and a V-cavity configurations. A maximum output power of 3.65 W was achieved for a heatsink temperature of 11°C and employing a 2.2% output coupler. The laser exhibited circular beam profiles for the full emission power range. The demonstration represents more than 10-fold increase of the output power compared to state-of-the-art flip-chip VECSELs previously demonstrated at the 1.55-μm wavelength range, and opens a new perspective for developing practical VECSEL-based laser system for applications such as LIDAR, spectroscopy, communications and distributed sensing.

Keywords

  • Optically-pumped VECSELs, Semiconductor lasers, Wafer-Fusion

Publication forum classification

Field of science, Statistics Finland