200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
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| Title of host publication | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings |
| Pages | 108-109 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2012 |
| Publication type | A4 Article in a conference publication |
| Event | 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States Duration: 4 Jun 2012 → 6 Jun 2012 |
Conference
| Conference | 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 |
|---|---|
| Country | United States |
| City | Berkeley, CA |
| Period | 4/06/12 → 6/06/12 |
Abstract
Negative differential resistance (NDR) devices in conjunction with MOS transistors provide a high speed, low power alternate to complementary metal oxide semiconductor (CMOS) technology. Boolean logic with gate-level pipelining has been demonstrated using monostable-bistable logic (MOBILE) gates. Application to low-power embedded memory is also promising. A key hurdle for tunneling based devices is development of a manufacturable process that can be integrated into a CMOS process line. Monolithic integration of low- temperature molecular beam epitaxy (LT-MBE) grown Si/SiGe resonant interband tunnel diodes (RITD) with NMOS has been demonstrated. However, chemical vapor deposition (CVD) is the dominant epitaxial growth technique for semiconductor manufacturing. The first CVD grown Si/SiGe RITD was demonstrated with a peak-to-valley current ratio (PVCR) of 1.85. In this work, further optimization of boron -doping has resulted in high PVCR up to 5.2. Current density dependence on tunneling barrier thickness is also investigated.