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200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages108-109
Number of pages2
DOIs
Publication statusPublished - 2012
Publication typeA4 Article in a conference publication
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 4 Jun 20126 Jun 2012

Conference

Conference6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period4/06/126/06/12

Abstract

Negative differential resistance (NDR) devices in conjunction with MOS transistors provide a high speed, low power alternate to complementary metal oxide semiconductor (CMOS) technology. Boolean logic with gate-level pipelining has been demonstrated using monostable-bistable logic (MOBILE) gates. Application to low-power embedded memory is also promising. A key hurdle for tunneling based devices is development of a manufacturable process that can be integrated into a CMOS process line. Monolithic integration of low- temperature molecular beam epitaxy (LT-MBE) grown Si/SiGe resonant interband tunnel diodes (RITD) with NMOS has been demonstrated. However, chemical vapor deposition (CVD) is the dominant epitaxial growth technique for semiconductor manufacturing. The first CVD grown Si/SiGe RITD was demonstrated with a peak-to-valley current ratio (PVCR) of 1.85. In this work, further optimization of boron -doping has resulted in high PVCR up to 5.2. Current density dependence on tunneling barrier thickness is also investigated.

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