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2-volt Solution-Processed, Indium Oxide (In2 O3) Thin Film Transistors on flexible Kapton

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2019 IEEE International Flexible Electronics Technology Conference, IFETC 2019
PublisherIEEE
Number of pages3
ISBN (Electronic)9781728117782
DOIs
Publication statusPublished - 1 Aug 2019
Publication typeA4 Article in a conference publication
EventIEEE International Flexible Electronics Technology Conference -
Duration: 1 Jan 2000 → …

Conference

ConferenceIEEE International Flexible Electronics Technology Conference
Period1/01/00 → …

Abstract

Semiconductor devices based upon silicon have powered the modern electronics revolution through advanced manufacturing processes. However, the requirement of high temperatures to create crystalline silicon devices has restricted its use in a number of new applications, such as printed and flexible electronics. Thus, developments with high mobility solution-processable metal oxides, surpassing α-Si in many instances, is opening a new era for flexible and wearable electronics. However, high operating voltages and relatively high deposition temperatures required for metal oxides remain impediments for the flexible devices. Here, the fabrication of low operating voltage, flexible thin film transistors (TFT) using a solution processed indium oxide In2 O3) channel material with room temperature deposited anodized high-κ aluminum oxide (Al2 O3) for gate dielectrics are reported. The flexible TFTs operates at low voltage Vds of 2 V, with threshold voltage Vth 0.42 V, on/off ratio 103 and subthreshold swing (SS) 420 mV/dec. The electron mobility (μ), extracted from the saturation regime, is 2.85 cm2/V.s and transconductance, gm, is 38 μS.