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31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review


Original languageEnglish
Title of host publicationProceedings of the 11th European Space Power Conference 2016
PublisherEDP Sciences
Publication statusPublished - 2017
Publication typeA4 Article in a conference publication
EventEuropean Space Power Conference -
Duration: 1 Jan 2000 → …

Publication series

NameE3S Web of Conferences
ISSN (Electronic)2267-1242


ConferenceEuropean Space Power Conference
Period1/01/00 → …


We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

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