31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 11th European Space Power Conference 2016 |
| Publisher | EDP Sciences |
| DOIs | |
| Publication status | Published - 2017 |
| Publication type | A4 Article in a conference publication |
| Event | European Space Power Conference - Duration: 1 Jan 2000 → … |
Publication series
| Name | E3S Web of Conferences |
|---|---|
| Volume | 16 |
| ISSN (Electronic) | 2267-1242 |
Conference
| Conference | European Space Power Conference |
|---|---|
| Period | 1/01/00 → … |
Abstract
We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.
Publication forum classification
Field of science, Statistics Finland
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