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31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application

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31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application. / Campesato, Roberta; Tukiainen, Antti; Aho, Arto; Gori, Gabriele; Isoaho, Riku; Greco, Erminio; Guina, Mircea.

Proceedings of the 11th European Space Power Conference 2016. EDP Sciences, 2017. 03003 (E3S Web of Conferences; Vol. 16).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Campesato, R, Tukiainen, A, Aho, A, Gori, G, Isoaho, R, Greco, E & Guina, M 2017, 31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application. in Proceedings of the 11th European Space Power Conference 2016., 03003, E3S Web of Conferences, vol. 16, EDP Sciences, European Space Power Conference, 1/01/00. https://doi.org/10.1051/e3sconf/20171603003

APA

Campesato, R., Tukiainen, A., Aho, A., Gori, G., Isoaho, R., Greco, E., & Guina, M. (2017). 31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application. In Proceedings of the 11th European Space Power Conference 2016 [03003] (E3S Web of Conferences; Vol. 16). EDP Sciences. https://doi.org/10.1051/e3sconf/20171603003

Vancouver

Campesato R, Tukiainen A, Aho A, Gori G, Isoaho R, Greco E et al. 31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application. In Proceedings of the 11th European Space Power Conference 2016. EDP Sciences. 2017. 03003. (E3S Web of Conferences). https://doi.org/10.1051/e3sconf/20171603003

Author

Campesato, Roberta ; Tukiainen, Antti ; Aho, Arto ; Gori, Gabriele ; Isoaho, Riku ; Greco, Erminio ; Guina, Mircea. / 31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application. Proceedings of the 11th European Space Power Conference 2016. EDP Sciences, 2017. (E3S Web of Conferences).

Bibtex - Download

@inproceedings{19190c18c52c446a85232f6b7b78d528,
title = "31{\%} European InGaP/GaAs/InGaNAs Solar Cells For Space Application",
abstract = "We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31{\%} at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.",
author = "Roberta Campesato and Antti Tukiainen and Arto Aho and Gabriele Gori and Riku Isoaho and Erminio Greco and Mircea Guina",
year = "2017",
doi = "10.1051/e3sconf/20171603003",
language = "English",
series = "E3S Web of Conferences",
publisher = "EDP Sciences",
booktitle = "Proceedings of the 11th European Space Power Conference 2016",
address = "France",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - 31% European InGaP/GaAs/InGaNAs Solar Cells For Space Application

AU - Campesato, Roberta

AU - Tukiainen, Antti

AU - Aho, Arto

AU - Gori, Gabriele

AU - Isoaho, Riku

AU - Greco, Erminio

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

AB - We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

U2 - 10.1051/e3sconf/20171603003

DO - 10.1051/e3sconf/20171603003

M3 - Conference contribution

T3 - E3S Web of Conferences

BT - Proceedings of the 11th European Space Power Conference 2016

PB - EDP Sciences

ER -