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33 W continuous output power semiconductor disk laser emitting at 1275 nm

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Details

Original languageEnglish
Pages (from-to)7008-7013
Number of pages6
JournalOptics Express
Volume25
Issue number6
DOIs
Publication statusPublished - 20 Mar 2017
Publication typeA1 Journal article-refereed

Abstract

We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. The laser exhibited an output power of 33 W for a pump spot with a diameter of 0.86 mm, an output coupler of 2.5%, and a heat-sink temperature of -5°C. When the temperature of the heat-sink was increased to 15°C, the maximum output power reached a value of ∼24 W. The study reveals that the wafer fused gain mirrors have a high optical quality and good uniformity enabling scaling of the maximum emitted power with the diameter of the pump spot, i.e. at least up to the 1 mm diameter.

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Field of science, Statistics Finland

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