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>8W GaInNAs VECSEL emitting at 615 nm

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationProceedings of SPIE
Subtitle of host publicationVertical External Cavity Surface Emitting Lasers (VECSELs) V
PublisherSPIE
Volume9349
ISBN (Print)9781628414394
DOIs
Publication statusPublished - 2015
Publication typeA4 Article in a conference publication
EventVertical External Cavity Surface Emitting Lasers - , United Kingdom
Duration: 1 Jan 2015 → …

Conference

ConferenceVertical External Cavity Surface Emitting Lasers
CountryUnited Kingdom
Period1/01/15 → …

Abstract

We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.

Keywords

  • frequency doubling, high power visible laser, OPSL, orange-red VECSEL, SDL, SHG

Publication forum classification

Field of science, Statistics Finland