>8W GaInNAs VECSEL emitting at 615 nm
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE |
| Subtitle of host publication | Vertical External Cavity Surface Emitting Lasers (VECSELs) V |
| Publisher | SPIE |
| Volume | 9349 |
| ISBN (Print) | 9781628414394 |
| DOIs | |
| Publication status | Published - 2015 |
| Publication type | A4 Article in a conference publication |
| Event | Vertical External Cavity Surface Emitting Lasers - , United Kingdom Duration: 1 Jan 2015 → … |
Conference
| Conference | Vertical External Cavity Surface Emitting Lasers |
|---|---|
| Country | United Kingdom |
| Period | 1/01/15 → … |
Abstract
We report a high-power VECSEL emitting <8W around 615 nm. The gain chip of the laser was grown by plasmaassisted molecular beam epitaxy and it comprised 10 GaInNAs quantum wells. The VECSEL cavity had a V-shaped geometry and a 10-mm-long non-critically phase-matched LBO crystal for second harmonic generation. The cavity incorporated also an etalon and a birefringent filter for controlling the output wavelength. With the aid of the secondharmonic output and the infrared light leaking out from the laser cavity, the single-pass conversion efficiency of the crystal was estimated to have a value of 0.75%.
ASJC Scopus subject areas
Keywords
- frequency doubling, high power visible laser, OPSL, orange-red VECSEL, SDL, SHG