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A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm

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A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm. / Saarinen, Esa J.; Lyytikäinen, Jari; Ranta, Sanna; Rantamäki, Antti; Saarela, Antti; Sirbu, Alexei; Iakovlev, Vladimir; Kapon, Eli; Okhotnikov, Oleg G.

Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016. 97340P-8 (Spie conference proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Saarinen, EJ, Lyytikäinen, J, Ranta, S, Rantamäki, A, Saarela, A, Sirbu, A, Iakovlev, V, Kapon, E & Okhotnikov, OG 2016, A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm. in Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. vol. 9734, 97340P-8, Spie conference proceedings, SPIE, SPIE Photonics West, 1/01/00. https://doi.org/10.1117/12.2209384

APA

Saarinen, E. J., Lyytikäinen, J., Ranta, S., Rantamäki, A., Saarela, A., Sirbu, A., ... Okhotnikov, O. G. (2016). A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm. In Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI (Vol. 9734). [97340P-8] (Spie conference proceedings). SPIE. https://doi.org/10.1117/12.2209384

Vancouver

Saarinen EJ, Lyytikäinen J, Ranta S, Rantamäki A, Saarela A, Sirbu A et al. A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm. In Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734. SPIE. 2016. 97340P-8. (Spie conference proceedings). https://doi.org/10.1117/12.2209384

Author

Saarinen, Esa J. ; Lyytikäinen, Jari ; Ranta, Sanna ; Rantamäki, Antti ; Saarela, Antti ; Sirbu, Alexei ; Iakovlev, Vladimir ; Kapon, Eli ; Okhotnikov, Oleg G. / A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm. Proceedings of SPIE: Vertical External Cavity Surface Emitting Lasers (VECSELs) VI. Vol. 9734 SPIE, 2016. (Spie conference proceedings).

Bibtex - Download

@inproceedings{ecb58ce588e841adbf9df15acfde12f8,
title = "A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm",
abstract = "1.5 W of output power was obtained in the challenging wavelength range between 700 and 800 nm by frequency doubling a wafer-fused 1.49-μm semiconductor disk laser pumped with 980-nm diodes. A bismuth borate crystal was used for doubling the frequency. A total optical-to-optical efficiency of 8.3 {\%} was achieved. The laser was tunable from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2 remained below 1.5 at all power levels. The laser is attractive for biomedical applications such as photodynamic therapy that benefit from the low absorption of light in tissue in this spectral range.",
author = "Saarinen, {Esa J.} and Jari Lyytik{\"a}inen and Sanna Ranta and Antti Rantam{\"a}ki and Antti Saarela and Alexei Sirbu and Vladimir Iakovlev and Eli Kapon and Okhotnikov, {Oleg G.}",
note = "INT=orc,{"}Saarela, Antti{"} JUFOID=71479",
year = "2016",
doi = "10.1117/12.2209384",
language = "English",
volume = "9734",
series = "Spie conference proceedings",
publisher = "SPIE",
booktitle = "Proceedings of SPIE",
address = "United States",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - A 1.5-W frequency doubled semiconductor disk laser tunable over 40 nm at around 745 nm

AU - Saarinen, Esa J.

AU - Lyytikäinen, Jari

AU - Ranta, Sanna

AU - Rantamäki, Antti

AU - Saarela, Antti

AU - Sirbu, Alexei

AU - Iakovlev, Vladimir

AU - Kapon, Eli

AU - Okhotnikov, Oleg G.

N1 - INT=orc,"Saarela, Antti" JUFOID=71479

PY - 2016

Y1 - 2016

N2 - 1.5 W of output power was obtained in the challenging wavelength range between 700 and 800 nm by frequency doubling a wafer-fused 1.49-μm semiconductor disk laser pumped with 980-nm diodes. A bismuth borate crystal was used for doubling the frequency. A total optical-to-optical efficiency of 8.3 % was achieved. The laser was tunable from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2 remained below 1.5 at all power levels. The laser is attractive for biomedical applications such as photodynamic therapy that benefit from the low absorption of light in tissue in this spectral range.

AB - 1.5 W of output power was obtained in the challenging wavelength range between 700 and 800 nm by frequency doubling a wafer-fused 1.49-μm semiconductor disk laser pumped with 980-nm diodes. A bismuth borate crystal was used for doubling the frequency. A total optical-to-optical efficiency of 8.3 % was achieved. The laser was tunable from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M2 remained below 1.5 at all power levels. The laser is attractive for biomedical applications such as photodynamic therapy that benefit from the low absorption of light in tissue in this spectral range.

U2 - 10.1117/12.2209384

DO - 10.1117/12.2209384

M3 - Conference contribution

VL - 9734

T3 - Spie conference proceedings

BT - Proceedings of SPIE

PB - SPIE

ER -