A membrane external-cavity surface-emitting laser (MECSEL) with emission around 825 nm
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Scientific › peer-review
Details
Original language | English |
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Title of host publication | Vertical External Cavity Surface Emitting Lasers (VECSELs) X |
Editors | Jennifer E. Hastie |
Publisher | SPIE |
ISBN (Electronic) | 9781510632905 |
ISBN (Print) | 9781510632899 |
DOIs | |
Publication status | Published - 2020 |
Publication type | A4 Article in a conference publication |
Event | Vertical External Cavity Surface Emitting Lasers (VECSELs) X - San Francisco, United States Duration: 4 Feb 2020 → 5 Feb 2020 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 11263 |
ISSN (Print) | 0277-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | Vertical External Cavity Surface Emitting Lasers (VECSELs) X |
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Country | United States |
City | San Francisco |
Period | 4/02/20 → 5/02/20 |
Abstract
A MECSEL emitting around 825nm is reported. With a tuning range from 807nm to 840 nm, the MECSEL extends the coverage of high beam quality semiconductor based lasers in the short 8XXnm region and opens new perspectives for scanning ground-based water-vapor differential absorption lidar. 1.4W maximum output power has been achieved at room temperature operation and at 12.5W absorbed power using a 532 nm emitting pump laser. The beam quality has been investigated by M2 measurements at different pump power. The effect from a growing pump mode and thermal lensing has been observed as the beam divergence angle decreases and the beam waist radius enlargens with increasing pump power.
ASJC Scopus subject areas
Keywords
- GaInAsP, MECSEL, Semiconductor laser, Short 8XXnm region, SiC heatspreaders, Thermal lensing, VECSEL