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A Two-Stage LNA Design for 28GHz Band of 5G on 45nm CMOS

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Details

Original languageEnglish
Title of host publication2020 IEEE 63rd International Midwest Symposium on Circuits and Systems, MWSCAS 2020 - Proceedings
PublisherIEEE
Pages957-961
Number of pages5
ISBN (Electronic)9781538629161
ISBN (Print)978-1-7281-8059-5
DOIs
Publication statusPublished - 2020
Publication typeA4 Article in a conference publication
EventInternational Midwest Symposium on Circuits and Systems - Springfield, United States
Duration: 9 Aug 202012 Aug 2020

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746
ISSN (Electronic)1558-3899

Conference

ConferenceInternational Midwest Symposium on Circuits and Systems
CountryUnited States
CitySpringfield
Period9/08/2012/08/20

Abstract

The proposed low noise amplifier (LNA) is specified to operate near 28GHz, i.e. within modern 5G bandwidths. The amplifier consists of two stages, a common-gate and a modified common-drain stage. Individual consideration of stages is followed by design of the whole amplifier, the layout design and extraction of parasitics. The post-layout design results show the gain of more than 15dB and noise figure (NF) of 3.2dB using only 5mW of power. Both input and output return losses are better than 10dB at the centre frequency. The limited voltage headroom of the second stage does not allow to obtain 1dB compression point (OP1dB) better than -10dBm. The design results are comparable to that found in recent LNA publications.

Keywords

  • 45 nm CMOS, 5G bandwidth, Low Noise Amplifier, White's follower

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