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Adsorption of metal impurities on H-terminated Si surfaces and their influence on the wet chemical etching of Si

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Details

Original languageEnglish
Pages (from-to)9 p
JournalJournal of Physics: Condensed Matter
Volume20
Issue number48, 485005
DOIs
Publication statusPublished - 2008
Externally publishedYes
Publication typeA1 Journal article-refereed

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