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AlGaAs/AlGaInP VECSELs with Direct Emission at 740-770 nm

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Details

Original languageEnglish
Pages (from-to)1245-1248
Number of pages4
JournalIEEE Photonics Technology Letters
Volume31
Issue number15
DOIs
Publication statusPublished - 1 Aug 2019
Publication typeA1 Journal article-refereed

Abstract

An optically-pumped vertical-external-cavity surface-emitting laser (OP-VECSEL) with 3.25-W output power emitting around 750 nm is demonstrated. The gain structure incorporates AlGaAs quantum wells (QWs) and barriers, and AlGaInP claddings. The emission wavelength could be tuned from 740 to 770 nm. The development addresses the need for high brightness lasers at a wavelength range that has proven difficult to reach. The demonstrated structure exhibits polarization-related peculiarities, which cause polarization switching under increased pump power due to mode competition. The presence of birefringence inside the active region is attributed to known long-range ordering within the AlGaInP claddings which causes distorted beam profiles. This influence on laser features has not been reported in VECSELs so far.

Keywords

  • AlGaAs, AlGaInP, quantum well lasers, semiconductor disk lasers, semiconductor growth, semiconductor laser, vertical-external-cavity surface-emitting lasers (VECSELs)

Publication forum classification

Field of science, Statistics Finland