Tampere University of Technology

TUTCRIS Research Portal

All solid source molecular beam epitaxy growth of strained-layer InGaAs/GaInAsP/GaInP quantum well lasers (y=980nm)

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)2332-2334
JournalApplied Physics Letters
Volume67
Issue number16
Publication statusPublished - 1995
Publication typeA1 Journal article-refereed

Publication forum classification