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Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

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Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth. / Puustinen, J.; Hilska, J.; Guina, M.

In: Journal of Crystal Growth, Vol. 511, 01.04.2019, p. 33-41.

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@article{19fbee9a35f6432a925491b57f0b174d,
title = "Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth",
abstract = "The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present a methodology for determining the variation in the Ga, As, and Bi fluxes and the temperature across a stationary substrate in molecular beam epitaxy. By correlating the flux distributions with material properties, we identify distinct regimes for epitaxy of GaAsBi. In particular, we devise a detailed image of the interplay between Bi incorporation and structural properties of a bulk GaAs 0.96 Bi 0.04 layer grown on GaAs(1 0 0) with respect to the As/Ga ratio. The influence of As/Ga is analyzed with high resolution over the important stoichiometric range (i.e. As/Ga = 0.6–1.6). Growth outside the near-stoichiometric As/Ga regime leads to decreased Bi incorporation, decreased structural quality and the formation of Ga, Ga/Bi or Bi droplets. On the other hand, growth at As/Ga = 1.00–1.17 leads to maximized material quality. For this regime, the surface roughness is further optimized by fine-tuning the As/Ga ratio to suppress surface mounding to a value of 0.5 nm. The results reveal the extreme sensitivity of GaAsBi growth to small variations in the As/Ga ratio, and demonstrate the applicability of stationary growth in studying these effects.",
keywords = "A3. Molecular beam epitaxy, B1. Bismuth compounds, B2. Semiconducting III-V materials, B2. Semiconducting ternary compounds",
author = "J. Puustinen and J. Hilska and M. Guina",
year = "2019",
month = "4",
day = "1",
doi = "10.1016/j.jcrysgro.2019.01.010",
language = "English",
volume = "511",
pages = "33--41",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

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TY - JOUR

T1 - Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth

AU - Puustinen, J.

AU - Hilska, J.

AU - Guina, M.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present a methodology for determining the variation in the Ga, As, and Bi fluxes and the temperature across a stationary substrate in molecular beam epitaxy. By correlating the flux distributions with material properties, we identify distinct regimes for epitaxy of GaAsBi. In particular, we devise a detailed image of the interplay between Bi incorporation and structural properties of a bulk GaAs 0.96 Bi 0.04 layer grown on GaAs(1 0 0) with respect to the As/Ga ratio. The influence of As/Ga is analyzed with high resolution over the important stoichiometric range (i.e. As/Ga = 0.6–1.6). Growth outside the near-stoichiometric As/Ga regime leads to decreased Bi incorporation, decreased structural quality and the formation of Ga, Ga/Bi or Bi droplets. On the other hand, growth at As/Ga = 1.00–1.17 leads to maximized material quality. For this regime, the surface roughness is further optimized by fine-tuning the As/Ga ratio to suppress surface mounding to a value of 0.5 nm. The results reveal the extreme sensitivity of GaAsBi growth to small variations in the As/Ga ratio, and demonstrate the applicability of stationary growth in studying these effects.

AB - The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging due to their high sensitivity to the epitaxial growth parameters. Here, we present a methodology for determining the variation in the Ga, As, and Bi fluxes and the temperature across a stationary substrate in molecular beam epitaxy. By correlating the flux distributions with material properties, we identify distinct regimes for epitaxy of GaAsBi. In particular, we devise a detailed image of the interplay between Bi incorporation and structural properties of a bulk GaAs 0.96 Bi 0.04 layer grown on GaAs(1 0 0) with respect to the As/Ga ratio. The influence of As/Ga is analyzed with high resolution over the important stoichiometric range (i.e. As/Ga = 0.6–1.6). Growth outside the near-stoichiometric As/Ga regime leads to decreased Bi incorporation, decreased structural quality and the formation of Ga, Ga/Bi or Bi droplets. On the other hand, growth at As/Ga = 1.00–1.17 leads to maximized material quality. For this regime, the surface roughness is further optimized by fine-tuning the As/Ga ratio to suppress surface mounding to a value of 0.5 nm. The results reveal the extreme sensitivity of GaAsBi growth to small variations in the As/Ga ratio, and demonstrate the applicability of stationary growth in studying these effects.

KW - A3. Molecular beam epitaxy

KW - B1. Bismuth compounds

KW - B2. Semiconducting III-V materials

KW - B2. Semiconducting ternary compounds

U2 - 10.1016/j.jcrysgro.2019.01.010

DO - 10.1016/j.jcrysgro.2019.01.010

M3 - Article

VL - 511

SP - 33

EP - 41

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -