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Analytic modeling of temperature dependence of 2D carrier mobility in as-grown and annealed GaInNAs/GaAs quantum well structures

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Article number125009
Pages (from-to)1-13
Number of pages13
JournalSemiconductor Science and Technology
Volume29
DOIs
Publication statusPublished - 2014
Publication typeA1 Journal article-refereed

Publication forum classification

Field of science, Statistics Finland