Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy
Research output: Contribution to journal › Article › Scientific › peer-review
Details
Original language | English |
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Pages (from-to) | 3709-3713 |
Journal | Journal of Applied Physics |
Volume | 86 |
Issue number | 7 |
Publication status | Published - 1999 |
Publication type | A1 Journal article-refereed |