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Block copolymer lithography: Feature size control and extension by an over-etch technique

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)318-323
Number of pages6
JournalThin Solid Films
Volume522
DOIs
Publication statusPublished - 1 Nov 2012
Publication typeA1 Journal article-refereed

Abstract

Block copolymer lithography based on block copolymer (BCP) self-assembly can be used to develop soft mask nanoscale templates for subsequent pattern transfer to generate substrate features. Self-assembly of lamellar polystyrene-b-polymethylmethacrylate BCP of varying molecular weights to generate silicon nanoscale features is reported here. It has also been demonstrated that the feature size can be controlled by a plasma over-etch process and discussed.

Keywords

  • Block copolymer, Lithography, Over-etching, Plasma etching, Polystyrene-b-polymethylmethacrylate, Self-assembly, Silicon nanowires