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Block co-polymers for nanolithography: Rapid microwave annealing for pattern formation on substrates

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Block co-polymers for nanolithography : Rapid microwave annealing for pattern formation on substrates. / Borah, Dipu; Rasappa, Sozaraj; Senthamaraikannan, Ramsankar; Holmes, Justin D.; Morris, Michael A.

In: Polymers, Vol. 7, No. 4, 2015, p. 592-609.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Borah, D, Rasappa, S, Senthamaraikannan, R, Holmes, JD & Morris, MA 2015, 'Block co-polymers for nanolithography: Rapid microwave annealing for pattern formation on substrates', Polymers, vol. 7, no. 4, pp. 592-609. https://doi.org/10.3390/polym7040592

APA

Borah, D., Rasappa, S., Senthamaraikannan, R., Holmes, J. D., & Morris, M. A. (2015). Block co-polymers for nanolithography: Rapid microwave annealing for pattern formation on substrates. Polymers, 7(4), 592-609. https://doi.org/10.3390/polym7040592

Vancouver

Borah D, Rasappa S, Senthamaraikannan R, Holmes JD, Morris MA. Block co-polymers for nanolithography: Rapid microwave annealing for pattern formation on substrates. Polymers. 2015;7(4):592-609. https://doi.org/10.3390/polym7040592

Author

Borah, Dipu ; Rasappa, Sozaraj ; Senthamaraikannan, Ramsankar ; Holmes, Justin D. ; Morris, Michael A. / Block co-polymers for nanolithography : Rapid microwave annealing for pattern formation on substrates. In: Polymers. 2015 ; Vol. 7, No. 4. pp. 592-609.

Bibtex - Download

@article{3e8256ca107e41388a4e5dd5580ceb97,
title = "Block co-polymers for nanolithography: Rapid microwave annealing for pattern formation on substrates",
abstract = "The integration of block copolymer (BCP) self-assembled nanopattern formation as an alternative lithographic tool for nanoelectronic device fabrication faces a number of challenges such as defect densities, feature size, pattern transfer, etc. Key barriers are the nanopattern process times and pattern formation on current substrate stack layers such as hard masks (e.g., silicon nitride, Si3N4). We report a rapid microwave assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) BCP thin films on planar and topographically patterned Si3N4 substrates. Hexagonally arranged, cylindrical structures were obtained and good pattern ordering was achieved. Factors affecting BCP self-assembly, notably anneal time and temperature, were studied and seen to have significant effects. Graphoepitaxy within the topographical structures provided long range, translational alignment of the patterns. The effect of surface topography feature size and spacing was investigated. The solvothermal microwave based technique used to provide periodic order in the BCP patterns showed significant promise and ordering was achieved in much shorter periods than more conventional thermal and solvent annealing methods. The implications of the work in terms of manufacturing technologies are discussed.",
keywords = "Block copolymer, Graphoepitaxy, Microwave anneal, Nanoscale patterns, Plasma etching, Polymer brush, Self-assembly, Silicon nitride substrate, Solvothermal process",
author = "Dipu Borah and Sozaraj Rasappa and Ramsankar Senthamaraikannan and Holmes, {Justin D.} and Morris, {Michael A.}",
year = "2015",
doi = "10.3390/polym7040592",
language = "English",
volume = "7",
pages = "592--609",
journal = "Polymers",
issn = "2073-4360",
publisher = "MDPI",
number = "4",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Block co-polymers for nanolithography

T2 - Rapid microwave annealing for pattern formation on substrates

AU - Borah, Dipu

AU - Rasappa, Sozaraj

AU - Senthamaraikannan, Ramsankar

AU - Holmes, Justin D.

AU - Morris, Michael A.

PY - 2015

Y1 - 2015

N2 - The integration of block copolymer (BCP) self-assembled nanopattern formation as an alternative lithographic tool for nanoelectronic device fabrication faces a number of challenges such as defect densities, feature size, pattern transfer, etc. Key barriers are the nanopattern process times and pattern formation on current substrate stack layers such as hard masks (e.g., silicon nitride, Si3N4). We report a rapid microwave assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) BCP thin films on planar and topographically patterned Si3N4 substrates. Hexagonally arranged, cylindrical structures were obtained and good pattern ordering was achieved. Factors affecting BCP self-assembly, notably anneal time and temperature, were studied and seen to have significant effects. Graphoepitaxy within the topographical structures provided long range, translational alignment of the patterns. The effect of surface topography feature size and spacing was investigated. The solvothermal microwave based technique used to provide periodic order in the BCP patterns showed significant promise and ordering was achieved in much shorter periods than more conventional thermal and solvent annealing methods. The implications of the work in terms of manufacturing technologies are discussed.

AB - The integration of block copolymer (BCP) self-assembled nanopattern formation as an alternative lithographic tool for nanoelectronic device fabrication faces a number of challenges such as defect densities, feature size, pattern transfer, etc. Key barriers are the nanopattern process times and pattern formation on current substrate stack layers such as hard masks (e.g., silicon nitride, Si3N4). We report a rapid microwave assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a polystyrene-blockpolydimethylsiloxane (PS-b-PDMS) BCP thin films on planar and topographically patterned Si3N4 substrates. Hexagonally arranged, cylindrical structures were obtained and good pattern ordering was achieved. Factors affecting BCP self-assembly, notably anneal time and temperature, were studied and seen to have significant effects. Graphoepitaxy within the topographical structures provided long range, translational alignment of the patterns. The effect of surface topography feature size and spacing was investigated. The solvothermal microwave based technique used to provide periodic order in the BCP patterns showed significant promise and ordering was achieved in much shorter periods than more conventional thermal and solvent annealing methods. The implications of the work in terms of manufacturing technologies are discussed.

KW - Block copolymer

KW - Graphoepitaxy

KW - Microwave anneal

KW - Nanoscale patterns

KW - Plasma etching

KW - Polymer brush

KW - Self-assembly

KW - Silicon nitride substrate

KW - Solvothermal process

UR - http://www.scopus.com/inward/record.url?scp=84930638018&partnerID=8YFLogxK

U2 - 10.3390/polym7040592

DO - 10.3390/polym7040592

M3 - Article

VL - 7

SP - 592

EP - 609

JO - Polymers

JF - Polymers

SN - 2073-4360

IS - 4

ER -