Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||8|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - Mar 2012|
|Publication type||A1 Journal article-refereed|
Si/SiGe resonant interband tunnel diodes (RITD) were fabricated using CVD on 200-mm silicon wafers. The RITD devices consist of a p +-i-n + structure with δ-doped quantum wells providing resonant interband tunneling through a nominally intrinsic Si/SiGe region. The vapor-phase doping technique was used to obtain abrupt degenerate doping profiles. The boron doping in the δ-doped region was varied, and its effect on peak current density J p and peak-to-valley current ratio (PVCR) was studied. As the flow rate is reduced, J p was found to reduce while the PVCR initially increases and then decreases. Device simulations were performed using the ATLAS simulator developed by SILVACO to interpret the results. A maximum PVCR of 2.95 was obtained, and the highest J p recorded was 600 A/cm 2. This is the highest reported PVCR for any CVD-grown Si/SiGe RITD.