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Broadband semiconductor saturable absorber mirror at 1550 nm using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector

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Details

Original languageEnglish
Pages (from-to)374-375
JournalElectronics Letters
Volume37
Issue number6
Publication statusPublished - 2001
Publication typeA1 Journal article-refereed

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