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Characteristics of InGaAs/GaAs/GaInP Quantum well lasers grown by gassource Molecular Beam Epitaxy

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publicationConference Digest of the 13th Intern. IEEE Semicond. Laser Conference, Takamatsu, Japan, Paper D-11 (1992)
Publication statusPublished - 1992
Publication typeA4 Article in a conference publication

Publication forum classification