Combined MBE-MOCVD process for high-efficiency multijunction solar cells
Research output: Other conference contribution › Paper, poster or abstract › Scientific
|Publication status||Published - 2016|
|Event||MBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, France|
Duration: 4 Sep 2016 → 9 Sep 2016
|Conference||MBE2016 19th International Conference on Molecular Beam Epitaxy|
|Period||4/09/16 → 9/09/16|
We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.