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Combined MBE-MOCVD process for high-efficiency multijunction solar cells

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
Publication statusPublished - 2016
EventMBE2016 19th International Conference on Molecular Beam Epitaxy - Montpellier, France
Duration: 4 Sep 20169 Sep 2016
https://mbe2016.sciencesconf.org/

Conference

ConferenceMBE2016 19th International Conference on Molecular Beam Epitaxy
Abbreviated titleMBE2016
CountryFrance
CityMontpellier
Period4/09/169/09/16
Internet address

Abstract

We present a fabrication method for high-efficiency GaInP/GaAs/GaInNAs triple junction solar cells, employing molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) processes. The method combines the advantages of both epitaxial techniques, the high quality of MBE-grown dilute nitrides and fast growth rate offered by MOCVD for standard III-V compounds. The GaInNAs bottom junction is first grown by MBE and then the rest of the structure is deposited by MOCVD. Triple-junction cells with conversion efficiency of ~29% at AM0 are demonstrated, opening a new perspective on cost-effective fabrication of high-efficiency multijunction solar cells for space and concentrated photovoltaic applications.

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