Tampere University of Technology

TUTCRIS Research Portal

Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)263-267
Number of pages5
JournalSemiconductors
Volume54
Issue number2
DOIs
Publication statusPublished - 1 Feb 2020
Publication typeA1 Journal article-refereed

Abstract

Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.

Keywords

  • microlaser, nitrogen-containing semiconductors, quantum dots, quantum wells

Publication forum classification

Field of science, Statistics Finland