Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
Research output: Contribution to journal › Article › Scientific › peer-review
Details
| Original language | English |
|---|---|
| Pages (from-to) | 263-267 |
| Number of pages | 5 |
| Journal | Semiconductors |
| Volume | 54 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Feb 2020 |
| Publication type | A1 Journal article-refereed |
Abstract
Abstract: The results of comparative analysis of the spectral and threshold characteristics of room-temperature injection microdisk lasers of the spectral range 1.2×× μm with different active regions, notably, InGaAsN/GaAs quantum wells or InAs/InGaAs/GaAs quantum dots are presented. It is found that microlasers of a comparable size with quantum wells possess a larger laser generation threshold when compared with microlasers with quantum dots. At the same time, the latter are characterized by a noticeably smaller fraction of emitted power corresponding to laser modes. The jump to lasing via an excited-state optical transition is also characteristic for them. Microdisk lasers based on InGaAsN alloy do not have these disadvantages.
ASJC Scopus subject areas
Keywords
- microlaser, nitrogen-containing semiconductors, quantum dots, quantum wells