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Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
Subtitle of host publicationA Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC
PublisherIEEE
Pages2950-2952
Number of pages3
ISBN (Electronic)978-1-5386-8529-7
DOIs
Publication statusPublished - Nov 2018
Publication typeA4 Article in a conference publication
EventWorld Conference on Photovoltaic Energy Conversion -
Duration: 5 Dec 1994 → …

Publication series

NameCONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
PublisherIEEE
ISSN (Print)0160-8371

Conference

ConferenceWorld Conference on Photovoltaic Energy Conversion
Period5/12/94 → …

Abstract

We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.

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