Tampere University of Technology

TUTCRIS Research Portal

Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Standard

Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells. / Tukiainen, Antti; Lyytikäinen, Jari; Aho, Timo; Halonen, Eero; Raappana, Marianna; Cappelluti, Federica; Guina, Mircea.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. IEEE, 2018. p. 2950-2952 (CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

Tukiainen, A, Lyytikäinen, J, Aho, T, Halonen, E, Raappana, M, Cappelluti, F & Guina, M 2018, Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, IEEE, pp. 2950-2952, World Conference on Photovoltaic Energy Conversion, 5/12/94. https://doi.org/10.1109/PVSC.2018.8548180

APA

Tukiainen, A., Lyytikäinen, J., Aho, T., Halonen, E., Raappana, M., Cappelluti, F., & Guina, M. (2018). Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC (pp. 2950-2952). (CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE). IEEE. https://doi.org/10.1109/PVSC.2018.8548180

Vancouver

Tukiainen A, Lyytikäinen J, Aho T, Halonen E, Raappana M, Cappelluti F et al. Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. IEEE. 2018. p. 2950-2952. (CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE). https://doi.org/10.1109/PVSC.2018.8548180

Author

Tukiainen, Antti ; Lyytikäinen, Jari ; Aho, Timo ; Halonen, Eero ; Raappana, Marianna ; Cappelluti, Federica ; Guina, Mircea. / Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC): A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC. IEEE, 2018. pp. 2950-2952 (CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE).

Bibtex - Download

@inproceedings{7138bad4dbab47eeae923efa6fc3932b,
title = "Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells",
abstract = "We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.",
author = "Antti Tukiainen and Jari Lyytik{\"a}inen and Timo Aho and Eero Halonen and Marianna Raappana and Federica Cappelluti and Mircea Guina",
year = "2018",
month = "11",
doi = "10.1109/PVSC.2018.8548180",
language = "English",
series = "CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE",
publisher = "IEEE",
pages = "2950--2952",
booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Comparison of ‘shallow’ and ‘deep’ junction architectures for MBE-grown InAs/GaAs quantum dot solar cells

AU - Tukiainen, Antti

AU - Lyytikäinen, Jari

AU - Aho, Timo

AU - Halonen, Eero

AU - Raappana, Marianna

AU - Cappelluti, Federica

AU - Guina, Mircea

PY - 2018/11

Y1 - 2018/11

N2 - We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.

AB - We report on the fabrication of InAs/GaAs quantum dot solar cells with high open circuit voltage by molecular beam epitaxy. ‘Shallow’ and ‘deep’ junction architectures were compared. The highest open circuit voltage of 0.94 V was obtained for the ‘shallow’ junction configuration. The open circuit voltage of InAs quantum dot solar cells decreased only by ~40 mV compared to GaAs reference cells for both junction architectures indicating high quality quantum dots. The open circuit voltage of InAs/GaAs quantum dot solar cells was also found to be dependent on the size of quantum dots.

U2 - 10.1109/PVSC.2018.8548180

DO - 10.1109/PVSC.2018.8548180

M3 - Conference contribution

T3 - CONFERENCE RECORD OF THE IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE

SP - 2950

EP - 2952

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)

PB - IEEE

ER -