Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
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Concentration of interstitial and substitutional nitrogen in GaNxAs1-x. / Ahlgren, T.; Vainonen-Ahlgren, E.; Likonen, J.; Li, W.; Pessa, M.
In: Applied Physics Letters, Vol. 80, No. 13, 2002, p. 2314-2316.Research output: Contribution to journal › Article › Scientific › peer-review
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TY - JOUR
T1 - Concentration of interstitial and substitutional nitrogen in GaNxAs1-x
AU - Ahlgren, T.
AU - Vainonen-Ahlgren, E.
AU - Likonen, J.
AU - Li, W.
AU - Pessa, M.
N1 - Contribution: organisation=orc,FACT1=1
PY - 2002
Y1 - 2002
M3 - Article
VL - 80
SP - 2314
EP - 2316
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
ER -