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Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials.

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

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Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials. / PESSA, M; Hakkarainen, T; KESKINEN, J; RAKENNUS, K; SALOKATVE, A; ZHANG, G; ASONEN, H.

PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2. ed. / M RAZEGHI. Aachen, Germany : SPIE, 1990. p. 529-542 (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Vol. 1361).

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Harvard

PESSA, M, Hakkarainen, T, KESKINEN, J, RAKENNUS, K, SALOKATVE, A, ZHANG, G & ASONEN, H 1990, Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials. in M RAZEGHI (ed.), PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2. PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), vol. 1361, SPIE, Aachen, Germany, pp. 529-542, CONF ON PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS, Finland, 28/10/90.

APA

PESSA, M., Hakkarainen, T., KESKINEN, J., RAKENNUS, K., SALOKATVE, A., ZHANG, G., & ASONEN, H. (1990). Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials. In M. RAZEGHI (Ed.), PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2 (pp. 529-542). (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Vol. 1361). Aachen, Germany: SPIE.

Vancouver

PESSA M, Hakkarainen T, KESKINEN J, RAKENNUS K, SALOKATVE A, ZHANG G et al. Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials. In RAZEGHI M, editor, PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2. Aachen, Germany: SPIE. 1990. p. 529-542. (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)).

Author

PESSA, M ; Hakkarainen, T ; KESKINEN, J ; RAKENNUS, K ; SALOKATVE, A ; ZHANG, G ; ASONEN, H. / Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials. PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2. editor / M RAZEGHI. Aachen, Germany : SPIE, 1990. pp. 529-542 (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)).

Bibtex - Download

@inproceedings{da51f5f03a7b4445b6da11892a2ad9cb,
title = "Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials.",
author = "M PESSA and T Hakkarainen and J KESKINEN and K RAKENNUS and A SALOKATVE and G ZHANG and H ASONEN",
note = "Contribution: organisation=fys,FACT1=1",
year = "1990",
language = "English",
isbn = "0-8194-0422-5",
series = "PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)",
publisher = "SPIE",
pages = "529--542",
editor = "M RAZEGHI",
booktitle = "PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2",
address = "United States",

}

RIS (suitable for import to EndNote) - Download

TY - GEN

T1 - Current state of gas-source molecular beam epitaxy for growth of optoelectronic materials.

AU - PESSA, M

AU - Hakkarainen, T

AU - KESKINEN, J

AU - RAKENNUS, K

AU - SALOKATVE, A

AU - ZHANG, G

AU - ASONEN, H

N1 - Contribution: organisation=fys,FACT1=1

PY - 1990

Y1 - 1990

M3 - Conference contribution

SN - 0-8194-0422-5

T3 - PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)

SP - 529

EP - 542

BT - PHYSICAL CONCEPTS OF MATERIALS FOR NOVEL OPTOELECTRONIC DEVICE APPLICATIONS I : MATERIALS GROWTH AND CHARACTERIZATION, PTS 1 AND 2

A2 - RAZEGHI, M

PB - SPIE

CY - Aachen, Germany

ER -