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Decomposition of Drain Current In Weak, Moderate, and Strong Inversion Components

Research output: Chapter in Book/Report/Conference proceedingConference contributionScientificpeer-review

Details

Original languageEnglish
Title of host publication2019 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
PublisherIEEE
Pages827-830
Number of pages4
ISBN (Electronic)978-1-7281-0996-1
ISBN (Print)978-1-7281-0997-8
DOIs
Publication statusPublished - Nov 2019
Publication typeA4 Article in a conference publication
EventIEEE International Conference on Electronics, Circuits and Systems -
Duration: 31 Dec 1899 → …

Conference

ConferenceIEEE International Conference on Electronics, Circuits and Systems
Period31/12/99 → …

Abstract

Using “reconciliation” MOSFET model proposed by Y. Tsividis one can approximate the drain current as a sum of weak, moderate and strong inversion components. The paper analyses and compares the sensitivity of these components with respect to the threshold voltage. The nonlinear distortions of current for each component are also calculated. The components are described with polynomial and exponential dependencies, and this allows one to use modified Bessel functions for calculation of harmonic distortions without assumption of signal smallness.

Keywords

  • MOS transistor model, weak inversion, moderate inversion, strong inversion, bias point sensitivity, nonlinear distortions

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