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Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

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Details

Original languageEnglish
Article number1700722
Number of pages7
JournalAdvanced Materials Interfaces
Volume4
Issue number22
Early online date19 Sep 2017
DOIs
Publication statusPublished - 2017
Publication typeA1 Journal article-refereed

Abstract

Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

ASJC Scopus subject areas

Keywords

  • defects, GaAs, HAXPES, interface, oxide

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