Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures
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Details
| Original language | English |
|---|---|
| Article number | 1700722 |
| Number of pages | 7 |
| Journal | Advanced Materials Interfaces |
| Volume | 4 |
| Issue number | 22 |
| Early online date | 19 Sep 2017 |
| DOIs | |
| Publication status | Published - 2017 |
| Publication type | A1 Journal article-refereed |
Abstract
Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.
ASJC Scopus subject areas
Keywords
- defects, GaAs, HAXPES, interface, oxide