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Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

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Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures. / Mäkelä, Jaakko; Tuominen, Marjukka; Dahl, Johnny; Granroth, Sari; Yasir, Muhammad; Lehtiö, Juha-Pekka; Uusitalo, Rami-Roope; Kuzmin, Mikhail; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Félix, Roberto; Lastusaari, Mika; Polojärvi, Ville; Lyytikäinen, Jari; Tukiainen, Antti; Guina, Mircea.

In: Advanced Materials Interfaces, Vol. 4, No. 22, 1700722, 2017.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Mäkelä, J, Tuominen, M, Dahl, J, Granroth, S, Yasir, M, Lehtiö, J-P, Uusitalo, R-R, Kuzmin, M, Punkkinen, M, Laukkanen, P, Kokko, K, Félix, R, Lastusaari, M, Polojärvi, V, Lyytikäinen, J, Tukiainen, A & Guina, M 2017, 'Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures', Advanced Materials Interfaces, vol. 4, no. 22, 1700722. https://doi.org/10.1002/admi.201700722

APA

Mäkelä, J., Tuominen, M., Dahl, J., Granroth, S., Yasir, M., Lehtiö, J-P., ... Guina, M. (2017). Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures. Advanced Materials Interfaces, 4(22), [1700722]. https://doi.org/10.1002/admi.201700722

Vancouver

Mäkelä J, Tuominen M, Dahl J, Granroth S, Yasir M, Lehtiö J-P et al. Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures. Advanced Materials Interfaces. 2017;4(22). 1700722. https://doi.org/10.1002/admi.201700722

Author

Mäkelä, Jaakko ; Tuominen, Marjukka ; Dahl, Johnny ; Granroth, Sari ; Yasir, Muhammad ; Lehtiö, Juha-Pekka ; Uusitalo, Rami-Roope ; Kuzmin, Mikhail ; Punkkinen, Marko ; Laukkanen, Pekka ; Kokko, Kalevi ; Félix, Roberto ; Lastusaari, Mika ; Polojärvi, Ville ; Lyytikäinen, Jari ; Tukiainen, Antti ; Guina, Mircea. / Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures. In: Advanced Materials Interfaces. 2017 ; Vol. 4, No. 22.

Bibtex - Download

@article{b0682e77e46e403a97265d76c563a73e,
title = "Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures",
abstract = "Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.",
keywords = "defects, GaAs, HAXPES, interface, oxide",
author = "Jaakko M{\"a}kel{\"a} and Marjukka Tuominen and Johnny Dahl and Sari Granroth and Muhammad Yasir and Juha-Pekka Lehti{\"o} and Rami-Roope Uusitalo and Mikhail Kuzmin and Marko Punkkinen and Pekka Laukkanen and Kalevi Kokko and Roberto F{\'e}lix and Mika Lastusaari and Ville Poloj{\"a}rvi and Jari Lyytik{\"a}inen and Antti Tukiainen and Mircea Guina",
year = "2017",
doi = "10.1002/admi.201700722",
language = "English",
volume = "4",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "Wiley",
number = "22",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures

AU - Mäkelä, Jaakko

AU - Tuominen, Marjukka

AU - Dahl, Johnny

AU - Granroth, Sari

AU - Yasir, Muhammad

AU - Lehtiö, Juha-Pekka

AU - Uusitalo, Rami-Roope

AU - Kuzmin, Mikhail

AU - Punkkinen, Marko

AU - Laukkanen, Pekka

AU - Kokko, Kalevi

AU - Félix, Roberto

AU - Lastusaari, Mika

AU - Polojärvi, Ville

AU - Lyytikäinen, Jari

AU - Tukiainen, Antti

AU - Guina, Mircea

PY - 2017

Y1 - 2017

N2 - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

AB - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.

KW - defects

KW - GaAs

KW - HAXPES

KW - interface

KW - oxide

U2 - 10.1002/admi.201700722

DO - 10.1002/admi.201700722

M3 - Article

VL - 4

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 22

M1 - 1700722

ER -