Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures
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Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures. / Mäkelä, Jaakko; Tuominen, Marjukka; Dahl, Johnny; Granroth, Sari; Yasir, Muhammad; Lehtiö, Juha-Pekka; Uusitalo, Rami-Roope; Kuzmin, Mikhail; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Félix, Roberto; Lastusaari, Mika; Polojärvi, Ville; Lyytikäinen, Jari; Tukiainen, Antti; Guina, Mircea.
In: Advanced Materials Interfaces, Vol. 4, No. 22, 1700722, 2017.Research output: Contribution to journal › Article › Scientific › peer-review
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TY - JOUR
T1 - Decreasing Defect-State Density of Al2O3/GaxIn1-xAs Device Interfaces with InOx Structures
AU - Mäkelä, Jaakko
AU - Tuominen, Marjukka
AU - Dahl, Johnny
AU - Granroth, Sari
AU - Yasir, Muhammad
AU - Lehtiö, Juha-Pekka
AU - Uusitalo, Rami-Roope
AU - Kuzmin, Mikhail
AU - Punkkinen, Marko
AU - Laukkanen, Pekka
AU - Kokko, Kalevi
AU - Félix, Roberto
AU - Lastusaari, Mika
AU - Polojärvi, Ville
AU - Lyytikäinen, Jari
AU - Tukiainen, Antti
AU - Guina, Mircea
PY - 2017
Y1 - 2017
N2 - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.
AB - Control of defect densities at insulator/GaxIn1−xAs interfaces is essential for optimal operation of various devices like transistors and infrared detectors to suppress, for example, nonradiative recombination, Fermi-level pinning, and leakage currents. It is reported that a thin InOx interface layer is useful to limit the formation of these defects by showing effect of InOx on quantum efficiency of Ga0.45In0.55As detector and on photoluminescence of GaAs. A study of the Al2O3/GaAs interface via hard X-ray synchrotron photoelectron spectroscopy reveals chemical structure changes at the interface induced by this beneficial InOx incorporation: the InOx sheet acts as an O diffusion barrier that prevents oxidation of GaAs and concomitant As bond rupture.
KW - defects
KW - GaAs
KW - HAXPES
KW - interface
KW - oxide
U2 - 10.1002/admi.201700722
DO - 10.1002/admi.201700722
M3 - Article
VL - 4
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 22
M1 - 1700722
ER -