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Defects in dilute nitride solar cells

Research output: Other conference contributionPaper, poster or abstractScientific

Details

Original languageEnglish
Publication statusPublished - 11 Jun 2015
EventAtomic-Scale Challenges in Advanced Materials - University of Turku, Turku, Finland
Duration: 11 Jun 201512 Jun 2015
http://users.utu.fi/kokko/wfiles/group/conferences/ascam8/ascam8.html

Workshop

WorkshopAtomic-Scale Challenges in Advanced Materials
Abbreviated titleASCAM VIII
CountryFinland
CityTurku
Period11/06/1512/06/15
Internet address

Abstract

Defects in crystal lattice can influence remarkably performance of semiconductor devices. Such parameters as background doping and nonradiative recombination rate are widely caused by defects. High-quality material with low defect densities is in key-role when fabricating high-efficiency multijunction III-V semiconductor solar cells. GaInNAs(Sb) is a promising material for high-efficiency multijunction solar cells. Well over 40% conversion efficiencies have been demonstrated from molecular-beam-epitaxy grown three-junction solar cell with GaInNAsSb bottom junction [1]. However, relatively low growth temperatures and incorporation of N induces defects to
the material, reducing its current and voltage generation [2]. Therefore, detailed
knowledge about defects and their formation is essential when fabricating high-quality GaInNAs(Sb). We used capacitance spectroscopy to characterize defects in dilute nitride and antimonide materials. Defects and their influence on solar cell operation are discussed.



[1] P.B. J. Allen, V. Sabnis, M. Wiemer and H. Yuen, "44%-efficiency triple-junction solar cells," in 9th International Conference on Concentrator Photovoltaic Systems, Miyazaki, Japan, 2013.
[2] A. Aho, V. Polojärvi, V. Korpijärvi, J. Salmi, A. Tukiainen, P. Laukkanen and M. Guina, "Composition dependent growth dynamics in molecular beam epitaxy of GaInNAs solar cells," Solar Energy Mater. Solar Cells, vol. 124, pp. 150-158, 2014.