Tampere University of Technology

TUTCRIS Research Portal

Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets

Research output: Contribution to journalArticleScientificpeer-review

Standard

Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. / Mannix, Andrew J.; Saari, Timo; Kiraly, Brian; Fisher, Brandon L.; Hsu, Chia-Hsiu; Huang, Zhi-Quan; Chuang, Feng-Chuan; Nieminen, Jouko; Lin, Hsin; Bansil, Arun; Hersam, Mark C.; Guisinger, Nathan P.

In: Applied Physics Letters, Vol. 115, No. 2, 023102, 08.07.2019.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Mannix, AJ, Saari, T, Kiraly, B, Fisher, BL, Hsu, C-H, Huang, Z-Q, Chuang, F-C, Nieminen, J, Lin, H, Bansil, A, Hersam, MC & Guisinger, NP 2019, 'Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets', Applied Physics Letters, vol. 115, no. 2, 023102. https://doi.org/10.1063/1.5095414

APA

Mannix, A. J., Saari, T., Kiraly, B., Fisher, B. L., Hsu, C-H., Huang, Z-Q., ... Guisinger, N. P. (2019). Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. Applied Physics Letters, 115(2), [023102]. https://doi.org/10.1063/1.5095414

Vancouver

Mannix AJ, Saari T, Kiraly B, Fisher BL, Hsu C-H, Huang Z-Q et al. Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. Applied Physics Letters. 2019 Jul 8;115(2). 023102. https://doi.org/10.1063/1.5095414

Author

Mannix, Andrew J. ; Saari, Timo ; Kiraly, Brian ; Fisher, Brandon L. ; Hsu, Chia-Hsiu ; Huang, Zhi-Quan ; Chuang, Feng-Chuan ; Nieminen, Jouko ; Lin, Hsin ; Bansil, Arun ; Hersam, Mark C. ; Guisinger, Nathan P. / Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. In: Applied Physics Letters. 2019 ; Vol. 115, No. 2.

Bibtex - Download

@article{c6dc36f7c5624288bfac8846a68ab7d6,
title = "Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets",
abstract = "Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remain challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNSs) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin-orbit coupling may result in spin-polarized conduction along certain edge orientations. This quantification of the electronic structure of edge states in SiNS 2DEGs will address ongoing efforts to engineer quantum effects in silicon-based nanostructures.",
author = "Mannix, {Andrew J.} and Timo Saari and Brian Kiraly and Fisher, {Brandon L.} and Chia-Hsiu Hsu and Zhi-Quan Huang and Feng-Chuan Chuang and Jouko Nieminen and Hsin Lin and Arun Bansil and Hersam, {Mark C.} and Guisinger, {Nathan P.}",
year = "2019",
month = "7",
day = "8",
doi = "10.1063/1.5095414",
language = "English",
volume = "115",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "2",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets

AU - Mannix, Andrew J.

AU - Saari, Timo

AU - Kiraly, Brian

AU - Fisher, Brandon L.

AU - Hsu, Chia-Hsiu

AU - Huang, Zhi-Quan

AU - Chuang, Feng-Chuan

AU - Nieminen, Jouko

AU - Lin, Hsin

AU - Bansil, Arun

AU - Hersam, Mark C.

AU - Guisinger, Nathan P.

PY - 2019/7/8

Y1 - 2019/7/8

N2 - Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remain challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNSs) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin-orbit coupling may result in spin-polarized conduction along certain edge orientations. This quantification of the electronic structure of edge states in SiNS 2DEGs will address ongoing efforts to engineer quantum effects in silicon-based nanostructures.

AB - Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remain challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNSs) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin-orbit coupling may result in spin-polarized conduction along certain edge orientations. This quantification of the electronic structure of edge states in SiNS 2DEGs will address ongoing efforts to engineer quantum effects in silicon-based nanostructures.

U2 - 10.1063/1.5095414

DO - 10.1063/1.5095414

M3 - Article

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023102

ER -