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Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells

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Details

Original languageEnglish
Pages (from-to)177-180
Number of pages4
JournalOptical Materials
Volume52
DOIs
Publication statusPublished - 1 Feb 2016
Publication typeA1 Journal article-refereed

Abstract

We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.

Keywords

  • Dilute nitrides, Molecular beam epitaxy, Optical properties

Publication forum classification

Field of science, Statistics Finland