Effects of insertion of strain-engineering Ga(In)NAs layers on optical properties of InAs/GaAs quantum dots for high-efficiency solar cells
Research output: Contribution to journal › Article › Scientific › peer-review
|Number of pages||4|
|Publication status||Published - 1 Feb 2016|
|Publication type||A1 Journal article-refereed|
We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.
ASJC Scopus subject areas
- Dilute nitrides, Molecular beam epitaxy, Optical properties