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Effects of thinning and heating for TiO2/AlInP junctions

Research output: Contribution to journalArticleScientificpeer-review

Details

Original languageEnglish
Pages (from-to)6-9
Number of pages4
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume205
DOIs
Publication statusPublished - 24 Aug 2015
Publication typeA1 Journal article-refereed

Abstract

TiO2/AlInP junctions are used to construct the antireflection coatings for solar cells and to passivate III-V nanostructure surfaces. The thickness of AlInP epilayer affects light absorption and appropriate Al composition determining further the energy barrier for carriers. We report on reducing the AlInP thickness by dry etching down to 10 nm without introducing harmful defect states at TiO<inf>2</inf>/AlInP interface and AlInP/GaInP interface below, according to photoluminescence. Synchrotron-radiation photoelectron spectroscopy reveals that increased oxidation of phosphorus is not harmful to TiO<inf>2</inf>/AlInP and that post heating of the material enhances AlInP oxidation and group III element segregation resulting in decreased material homogeneity.

Keywords

  • AlInP, Passivation, Solar cell, TiO<inf>2</inf>

Publication forum classification

Field of science, Statistics Finland