Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy
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Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. / Tappura, K.
In: Journal of Applied Physics, Vol. 74, 1993, p. 4565-4570.Research output: Contribution to journal › Article › Scientific › peer-review
Harvard
Tappura, K 1993, 'Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy', Journal of Applied Physics, vol. 74, pp. 4565-4570.
APA
Tappura, K. (1993). Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 74, 4565-4570.
Vancouver
Tappura K. Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Applied Physics. 1993;74:4565-4570.
Author
Bibtex - Download
@article{8eeee30d3479467bbaeed8f2a896a036,
title = "Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy",
author = "K. Tappura",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "74",
pages = "4565--4570",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy
AU - Tappura, K.
N1 - Contribution: organisation=fys,FACT1=1
PY - 1993
Y1 - 1993
M3 - Article
VL - 74
SP - 4565
EP - 4570
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
ER -