Tampere University of Technology

TUTCRIS Research Portal

Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy

Research output: Contribution to journalArticleScientificpeer-review

Standard

Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. / Tappura, K.

In: Journal of Applied Physics, Vol. 74, 1993, p. 4565-4570.

Research output: Contribution to journalArticleScientificpeer-review

Harvard

Tappura, K 1993, 'Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy', Journal of Applied Physics, vol. 74, pp. 4565-4570.

APA

Tappura, K. (1993). Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Applied Physics, 74, 4565-4570.

Vancouver

Tappura K. Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. Journal of Applied Physics. 1993;74:4565-4570.

Author

Tappura, K. / Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy. In: Journal of Applied Physics. 1993 ; Vol. 74. pp. 4565-4570.

Bibtex - Download

@article{8eeee30d3479467bbaeed8f2a896a036,
title = "Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy",
author = "K. Tappura",
note = "Contribution: organisation=fys,FACT1=1",
year = "1993",
language = "English",
volume = "74",
pages = "4565--4570",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Electrical and optical properties of GaInAsP grown by gas-source molecular beam epitaxy

AU - Tappura, K.

N1 - Contribution: organisation=fys,FACT1=1

PY - 1993

Y1 - 1993

M3 - Article

VL - 74

SP - 4565

EP - 4570

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

ER -